RTU 3rd sem Computer Engineering B.Tech. Syllabus Electronic Devices & Circuits

3CS1A ELECTRONIC DEVICES & CIRCUITS

Unit 1

Mobility and conductivity, charge densities in a semiconductor, Fermi Dirac
distribution, carrier concentrations and fermi levels in semiconductor, Generation
and recombination of charges, diffusion and continuity equation, Mass action Law,
Hall effect. Junction diodes, Diode as a ckt. element, load line concept, clipping and
clamping circuits, Voltage multipliers.

Unit 2

Transistor characteristics, Current components, Current gains: alpha and beta.
Operating point. Hybrid model, h-parameter equivalent circuits. CE, CB and CC
configuration. DC and AC analysis of CE,CC and CB amplifiers. Ebers-Moll
model. Biasing & stabilization techniques. Thermal runaway, Thermal stability.

Unit 3

SMALL SIGNAL AMPLIFIERS AT LOW FREQUENCY : Analysis of BJT and
FET, RC coupled amplifiers. Frequency response, midband gain, gains at low and
high frequency. Miller’s Theorem. Cascading Transistor amplifiers, Emitter
follower. JFET, MOSFET, Equivalent circuits and biasing of JFET's & MOSFET’s.
Low frequency CS and CD JFET amplifiers. FET as a voltage variable resistor.
Source follower.

Unit 4

FEEDBACK AMPLIFIERS : Classification, Feedback concept, Transfer gain with
feedback, General characteristics of negative feedback amplifiers. Analysis of
voltage-series, voltage-shunt, current- series and current-shunt feedback amplifier.
Stability criterion.

Unit 5

OSCILLATORS : Classification. Criterion for oscillation. Tuned collector, Hartley,
Colpitts, RC Phase shift, Wien bridge and crystal oscillators, Astable, monostable
and bistable multivibrators. Schmitt trigger.